File:Структура контактного транзистора Type A.PNG
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DescriptionСтруктура контактного транзистора Type A.PNG | Структура первого серийного контактного транзистора Type A. Контакты из фосфористой бронзы, создавали островки проводимости n-типа. Островки p-типа создаются при электротренировке контактов (практически независимо от примесей в электродах). |
Date | |
Source | Own work |
Author | Retired electrician |
Public domainPublic domainfalsefalse |
This work is ineligible for copyright and therefore in the public domain because it consists entirely of information that is common property and contains no original authorship. |
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English: The point-contact transistor effect takes place in the germanium surface below the two wires. The germanium plate is the Base. Two other wires connect to the surface (<0.1mm distance at surface) of the germanium surface. (Emitter and Collector)
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 03:03, 26 March 2012 | 949 × 688 (51 KB) | Retired electrician (talk | contribs) | дополнено | |
14:25, 25 March 2012 | 909 × 634 (41 KB) | Retired electrician (talk | contribs) | {{Information |Description=Структура первого серийного контактного транзистора Type A. Контакты из фосфористой и бериллиевой бронзы, загрязняя германи... |
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