File:Etching wet-chemical vs rie (DE).svg
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editDescriptionEtching wet-chemical vs rie (DE).svg |
English: Comparison process between wet-chemical etching and reactive ion etching (RIE) of silicon dioxide
Deutsch: Vergleich der Siliciumdioxid-Ätzprozesse zwischen nasschemischen Ätzen und reaktiven Ionenätzen (RIE) |
Date | (UTC) |
Source | Own work |
Author | Cepheiden |
Other versions | replication of/Kopie nach: Gary S. May, Simon M. Sze: Fundamentals of Semiconductor Fabrication. Wiley & Sons, 2003, ISBN 0471452386, S. 90 |
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 18:40, 11 January 2009 | 768 × 1,024 (36 KB) | Cepheiden (talk | contribs) | {{Information |Description={{en|1=Comparison process between wet-chemical etching and reactive ion etching (RIE) of silicon dioxide}} {{de|1=Vergleich der Siliciumdioxid-Ätzprozesse zwischen nasschemischen Ätzen und reaktiven Ionenätzen (RIE)}} |Source |
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