File:Power die.svg
Size of this PNG preview of this SVG file: 500 × 225 pixels. Other resolutions: 320 × 144 pixels | 640 × 288 pixels | 1,024 × 461 pixels | 1,280 × 576 pixels | 2,560 × 1,152 pixels.
Original file (SVG file, nominally 500 × 225 pixels, file size: 21 KB)
Captions
Captions
Add a one-line explanation of what this file represents
Summary edit
| Description |
English: Aproximative dimensions and structure of a power semiconductor die. This is a 3-terminal device, with two terminals on the top (the emitter and base for a BJT, the gate and emitter for an IGBT, the source and gate for a power MOSFET). The remaining terminal (respectively collector, collector and drain) is on the back. |
| Date | Modified 2010-02-03 |
| Source | Own work |
| Author |
Cyril Buttay
|
Licensing edit
I, the copyright holder of this work, hereby publish it under the following licenses:
|
Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
  
|
This file is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported license. | |
| ||
| This licensing tag was added to this file as part of the GFDL licensing update. |
This file is licensed under the Creative Commons Attribution-Share Alike 2.5 Generic, 2.0 Generic and 1.0 Generic license.
- You are free:
- to share – to copy, distribute and transmit the work
- to remix – to adapt the work
- Under the following conditions:
- attribution – You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- share alike – If you remix, transform, or build upon the material, you must distribute your contributions under the same or compatible license as the original.
You may select the license of your choice.
File history
Click on a date/time to view the file as it appeared at that time.
| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 17:32, 3 February 2010 | | 500 × 225 (21 KB) | Inductiveload (talk | contribs) | fixed text, resize to 500px and simplify paths |
| 08:56, 10 April 2006 |  | 1,052 × 525 (31 KB) | CyrilB~commonswiki (talk | contribs) | Cyril BUTTAY Aproximative dimensions and structure of a power semiconductor die. This is a 3-terminal device, with two terminals on the top (the emitter and base for a BJT, the gate and emitter for an IGBT, the source and gate for a power MOSFET). The re |
You cannot overwrite this file.
File usage on Commons
The following page uses this file:
File usage on other wikis
The following other wikis use this file:
- Usage on ar.wikipedia.org
- Usage on en.wikipedia.org
- Usage on es.wikipedia.org
