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File:US Patent 1745175 Lilienfeld proto-FET.PNG

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Русский: Из патента США 1745175, выданного Юлиусу Лилиенфельду: первый прототип полевого транзистора.
English: The field-effect transistor was patented by Julius Edgar Lilienfeld in 1926. For almost thirty years, researchers tried to implement it in real life... and each time they failed. In the 1940s one group, led by John Bardeen, tried to do it and accidentally invented the point-contact transistor. It worked... sort of. The true FET became a reality a decade later.
Date Filed Oct 8 1926
Source U.S. Patent 1,745,175
Author en:Julius Lilienfeld and perhaps his US patent attorneys
May or may not be in the public domain
 In general, the contents of United States patents are in the public domain.

In specific cases, patent applicants and holders may claim copyright in portions of those documents. In those specific cases, applicants are required to identify the portions that are protected under copyright, and are additionally required to state the following within the body of the application and patent (see 37 CFR 1.71(d) & (e) and 37 CFR 1.84(s), and MPEP § 608.01(e) & (w) and MPEP § 1512):

A portion of the disclosure of this patent document contains material which is subject to (copyright or mask work) protection. The (copyright or mask work) owner has no objection to the facsimile reproduction by any­one of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all (copyright or mask work) rights whatsoever.

The original patent should be checked for the presence of such language before an assumption is made that the contents are in the public domain. (This template can be replaced by {{PD-US-patent-no notice}} in such cases.)

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current05:59, 31 March 2012Thumbnail for version as of 05:59, 31 March 2012769 × 523 (37 KB)Retired electrician (talk | contribs){{Information |Description=Из патента США 1745175, выданного Юлиусу Лилиенфельду: первый прототип полевого транзистора.<br>The first historical patent for field-effect transistor |...

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