File:Chemical-mechanical polishing (CMP-108, conditioner).jpg
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DescriptionChemical-mechanical polishing (CMP-108, conditioner).jpg |
English: Pad conditioner (Chiaping model 108) for the chemical-mechanical polishing (CMP), which removes material from uneven topography on a wafer surface until a flat surface is created.
Deutsch: Pad-Konditioner (Chiaping Modell 108) für das chemisch-mechanische Polieren (CMP), CMP entfernt Material auf einer Wafer-Oberfläche und glättet somit eine unebenen Topographie. |
Date | |
Source | CMP-108 |
Author | cpxmn |
See description under [1]
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This image was originally posted to Flickr by cpxmn at https://www.flickr.com/photos/22041495@N02/2126608662. It was reviewed on 12 April 2010 by FlickreviewR and was confirmed to be licensed under the terms of the cc-by-sa-2.0. |
12 April 2010
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 15:53, 12 April 2010 | 1,024 × 768 (359 KB) | Cepheiden (talk | contribs) | {{Information |Description={{en|CMP CHEMICAL MECHANICAL POLISHING removes material from uneven topography on a wafer surface until a flat surface is created.}} |Source=[http://www.flickr.com/photos/22041495@N02/2126608662/ CMP-108] |Date=2005-08-25 14:10 |
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