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Germanium bipolar transistor

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Description
English: EFT122 Germanium bipolar transistor, PNP, 150mW, 24V, 250mA, 0.2MHz. Manufactured in Romania, I.P.R.S. Baneasa, 1960s.
Date
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Author Mister rf

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current20:09, 18 October 2022Thumbnail for version as of 20:09, 18 October 20222,400 × 1,350 (718 KB)Mister rf (talk | contribs)Uploaded own work with UploadWizard

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