File:EUV mask shadow.PNG
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Summary
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| Description |
English: An EUV mask feature casts a shadow projected onto wafer.[1] The absorber height is 70 nm on the mask. Illumination angle is 3 to 9 degrees (with respect to normal). The resulting shadow on the mask is reduced 4x to the final shadow region on the wafer. This is plotted vs. the incident angle.
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| Date | 20 September 2008 (original upload date) |
| Source | Transferred from en.wikipedia to Commons. |
| Author | Guiding light at English Wikipedia |
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Guiding light at English Wikipedia, the copyright holder of this work, hereby publishes it under the following licenses:
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Attribution: Guiding light at English Wikipedia
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Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License. |
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The original description page was here. All following user names refer to en.wikipedia.
| Date/Time | Dimensions | User | Comment |
|---|---|---|---|
| 2008-09-20 06:59 | 455×443× (8428 bytes) | Guiding light | An EUV mask feature casts a shadow projected onto wafer. The absorber height is 70 nm on the mask. Illumination angle is 3 to 9 degrees (with respect to normal). The resulting shadow on the mask is reduced 4x to the final shadow region on the wafer. This |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 10:07, 28 February 2016 | | 455 × 443 (8 KB) | FastilyClone (talk | contribs) | Transferred from enwp |
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