File:Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide (Figure 3).png
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(3a) Dependence of the single-photon emission rate. (3b) The ratio of the electron capture rate to the hole capture rate. (3c) Photon emission rate as a function of the current density (3d) g(2) curves.
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| Description |
English: (3a) Dependence of the single-photon emission rate from the SiC-SF center on its position within the SiC diode at a pump current density of 1.84 A/cm2, which corresponds to the maximum current of 14 mA in the experiment.19 (3b) The ratio of the electron capture rate to the hole capture rate at a pump current density of 1.84 A/cm2. (3c) Photon emission rate as a function of the current density at points marked in panel (a). The experimental curve is retrieved from ref. 19 and corrected for the detection efficiency (53%) and collection efficiency (estimated to be 1.5%, which is slightly lower than the value reported in ref. 19). (3d) g(2) curves retrieved from ref. 19 and numerically simulated for the color center at point 2 in panel a |
| Date | |
| Source |
Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide |
| Author | Igor A. Khramtsov, Andrey A. Vyshnevyy, Dmitry Yu. Fedyanin |
Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Russian Federation
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