File:LOCOS process DE.svg
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editDescriptionLOCOS process DE.svg |
English: (originally) LOCOS process for isolating structures in semiconductor technology
1.-3. layer stack deposition (SiO2, Si3N4, photo resist) 4. opening oxidation window 5. thermal oxidation of Silicon with increasing volume 6. back etch of SiO2 and removal of nitride maskDeutsch: (ursprünglicher) LOCOS-Prozess für die Herstellung von Isolationsstrukturen in der Halbleitertechnik
1.-3. Abscheidung des Schichtstapels (SiO2, Si3N4, Fotoresist) 4. Öffnung des Oxidationsfensters 5. Thermische Oxidation von Silicium mit Volumenzunahme 6. Rückätzen von SiO2 und Entfernung der Nitridmaske |
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Source | Own work |
Author | Cepheiden |
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current | 21:41, 1 February 2009 | ![]() | 768 × 600 (20 KB) | Cepheiden (talk | contribs) | {{Information |Description={{en|1=(originally) LOCOS process for isolating structures in semiconductor technology 1.-3. layer stack deposition (SiO2, Si3N4, photo resist) 4. opening oxidation window 5. thermal oxidation of Silicon with increasing volume |
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