File:MOS DRAM patent.pdf
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| Description |
English: United States patent 3,387,286, detailing metal-oxide-semiconductor dynamic random-access memory technology |
| Date | |
| Source | https://patents.google.com/patent/US3387286A |
| Author | R. H. Dennard |
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The text and illustrations of US patents published before March 1, 1989 are in the public domain unless the patent text contains a specific notice that portions are copyrighted. See 37 CFR 1.71(d), 37 CFR 1.84(s)
The original patent contains no such notice, so its contents are in the public domain. Note: This only applies to images published before March 1, 1989. Patents published after that date are most likely copyrighted, unless in the public domain for another reason, such as {{PD-ineligible}}. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 19:28, 8 October 2022 |  | 1,158 × 1,702, 9 pages (1.23 MB) | FreeMediaKid! (talk | contribs) | Uploaded a work by R. H. Dennard from https://patents.google.com/patent/US3387286A with UploadWizard |
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