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File:Relaxed and cracked GaN.jpg

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Русский: Формирование тонкопленочных структур методом МОГФЭ становится настоящим вызовом, когда формирующие структуру плёнки состоят из различных веществ. Элементарные ячейки разных веществ различаются формой и размерами, поэтому когда нужно заставить расти плёнку одного материала на поверхности плёнки другого, верхний слой испытывает сильное растягивающее напряжение. А оказавшись в таких условиях плёнка ищет пути минимизировать внутренние напряжения. Если плёнку растягивают внутренние силы, один из самых простых выходов для снятия этих напряжений - образование трещин. Они обычно образуются по направлениям кристаллографических плоскостей кристалла вещества. На изображении - снявший напряжения потрескавшийся GaN на плёнке AlN на кремнии.
English: Film formation using MOCVD can be tricky when we try to form films of different composition on each other. The basic unit cells of different materials have different shapes and sizes, so when you try to convince films to stick together they feel tensile stress. And as almost anything under stress, they start to resist and try to relax. How can films relax if something tearing you apart? They crack. Usually they crack along the boundaries of the crystallographic planes. That’s what you see on the picture - very relaxed very cracked GaN on AlN on silicon.
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Author Evavilova

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current10:33, 12 December 2017Thumbnail for version as of 10:33, 12 December 20172,560 × 1,920 (651 KB)Evavilova (talk | contribs)User created page with UploadWizard

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