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File:Surface MOCVD films defects.jpg

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English: During the thin film deposition by MOCVD it is possible to form a film with small lattice constant on film with big one. In this case upper film will face tensile stress and will seek a way to get rid of it. Some ways of making it is: to growth not as a single sheet, but as a small sheets, to form cracks and holes. This image shows all kind of ways nitride film used to relieve stress and not-to-become a heterostructure for High Electron Mobility Transistor. The central part takes the form of a hexagon in accordance with the structure of the unit cell of the material.
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Author Evavilova

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current10:33, 12 December 2017Thumbnail for version as of 10:33, 12 December 20172,560 × 1,920 (418 KB)Evavilova (talk | contribs)User created page with UploadWizard

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