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File:STAM Cover 2012.jpg

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Description Cover of a promotional issue of the journal Science and Technology of Advanced Materials (STAM): Selected Papers From 2012.
The image is from "Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures" Vishal Ajit Shah et al 2012 Sci. Technol. Adv. Mater. 13 055002 doi:10.1088/1468-6996/13/5/055002.
Figure 5: "A tilted plan-view SEM image at 20 kV of a fully suspended Ge spiderweb of lateral dimensions over 200 μm × 200 μm, leg width 3 μm and thickness 200 nm. Green shows Ge. The outlined area shows the advantage of using higher SEM accelerating voltages, where the electron transparency is obvious."
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Author Vishal Ajit Shah
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current08:19, 25 August 2013Thumbnail for version as of 08:19, 25 August 20131,256 × 1,791 (141 KB)Materialscientist (talk | contribs){{Information |Description=Cover of a promotional issue of the journal Science and Technology of Advanced Materials (STAM): Selected Papers From 2012. <br>The image is from "Electrical isolation of dislocations in Ge layers on Si(001) substrates throug...

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